PROBLEMS OF THE FORMATION OF DISLOCATION STRUCTURES IN HETEROEPITAXIAL LAYERSSTENIN SI.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 55; NO 2; PP. 519-527; ABS. RUS; BIBL. 15 REF.Article

THE PLASTIC DEFORMATION KINETICS FOR HETEROEPITAXIAL FILMS DURING THE MISFIT DISLOCATION GENERATION FROM THE GROWTH SURFACESTENIN SI; GUTAKOVSKII AK.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 66; NO 1; PP. 249-253; ABS. RUS; BIBL. 10 REF.Article

EQUILIBRIUM DISLOCATION CONFIGURATIONS IN HETEROSTRUCTURESTRUKHANOV EM; STENIN SI.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 66; NO 2; PP. 591-596; ABS. RUS; BIBL. 12 REF.Article

METHODE DE DETERMINATION PRECISE DES DISTANCES DES PLANS RETICULAIRES D'APRES LES DIAGRAMMES ELECTRONIQUES EN REFLEXIONPCHELYAKOV OP; STENIN SI.1978; KRISTALLOGRAFIJA; SUN; DA. 1978; VOL. 23; NO 5; PP. 1031-1032; BIBL. 5 REF.Article

INITIAL STAGE OF PLASTIC DEFORMATION OF SUBSTRATES IN HETEROSTRUCTURESTRUKHANOV EM; STENIN SI.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 66; NO 1; PP. 125-131; ABS. RUS; BIBL. 13 REF.Article

APPLICATION DU MICROSCOPE ELECTRONIQUE ET DE LA TOPOGRAPHIE AUX RAYONS X A L'ETUDE DE LA STRUCTURE DES MATERIAUX SEMI-CONDUCTEURS)STENIN SI; ASEEV AL.1975; IZVEST. SIBIR. OTDEL. AKAD. NAUK S.S.S.R., KHIM. NAUK; S.S.S.R.; DA. 1975; NO 2; PP. 136-160; BIBL. 2 P.Article

MESURE DE LA COURBURE DES MONOCRISTAUX SUR UN SPECTROMETRE A 2 CRISTAUX AVEC UTILISATION DES FAISCEAUX KALPHA ET KBETANOSKOV AG; STENIN SI; TRUKHANOV EM et al.1982; PRIBORY I TEHNIKA EKSPERIMENTA; ISSN 0032-8162; SUN; DA. 1982; NO 2; PP. 181-183; BIBL. 4 REF.Article

RESIDUAL DEFECTS IN IMPLANTED LAYERS ON SILICON AFTER HIGH-TEMPERATURE ANNEALINGGERASIMENKO NN; KALININ VV; STENIN SI et al.1978; RAD. EFFECTS; GBR; DA. 1978; VOL. 37; NO 3-4; PP. 167-172; BIBL. 19 REF.Article

ETUDE DU SYSTEME GE-GES A L'AIDE DE LA THERMOGRAVIMETRIE ET DU MICROSCOPE ELECTRONIQUEIVANCHENKO VA; PCHELYAKOV OP; STENIN SI et al.1976; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1976; VOL. 12; NO 1; PP. 12-15; H.T. 1; BIBL. 10 REF.Article

DISLOCATION INTERACTIONS IN GERMANIUM COVERED WITH DIELECTRIC FILMSTRUKHANOV EM; STENIN SI; NOSKOV AG et al.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 56; NO 2; PP. 443-450; ABS. RUS; BIBL. 8 REF.Article

THE FORMATION OF PARTIAL MISFIT DISLOCATIONS DURING HETEROEPITAXYGUSTAKOVSKII AK; STENIN SI; ZAKHAROV BG et al.1981; PHYS. STATUS SOLIDI(A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 57; NO 1; PP. 299-304; BIBL. 15 REF.Article

DISLOCATIONS AND STRESSES IN A CRYSTAL WITH AN ISLAND FILMTRUKHANOV EM; STENIN SI; NOSKOV AG et al.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 53; NO 2; PP. 433-440; ABS. RUS; BIBL. 16 REF.Article

DISLOCATION PROCESSES DURING PLASTIC DEFORMATION OF SI AND GE IN THE RANGE 0.50 TO 0.95 OF THE MELTING TEMPERATURE.ASEEV AL; GOLOBOKOV YN; STENIN SI et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 28; NO 1; PP. 355-364; ABS. RUSSE; BIBL. 22 REF.Article

POSSIBILITES DE CONTROLE DU TYPE DOMINANT DES DISLOCATIONS D'INCOMPATIBILITE EN HETEROEPITAXIEGUTAKOVSKIJ AK; PCHELYAKOV OP; STENIN SI et al.1980; KRISTALLOGRAFIJA; ISSN 0023-4761; SUN; DA. 1980; VOL. 25; NO 4; PP. 806-814; BIBL. 17 REF.Article

THE EFFECT OF IMPLANTATION TEMPERATURE ON THE MECHANISM OF MISFIT DISLOCATION FORMATION.KALININ VV; GERASIMENKO NN; STENIN SI et al.1978; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1978; VOL. 45; NO 2; PP. 377-385; ABS. RUSSE; BIBL. 15 REF.Article

SPECIFIC FEATURES OF THE DISLOCATION STRUCTURE OF GERMANIUM IN THE SYSTEM GERMANIUM-PYROLITIC SILICA FILM.TRUKHANOV EM; GOROKHOV EB; STENIN SI et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 33; NO 1; PP. 435-442; H.T. 5; ABS. RUSSE; BIBL. 14 REF.Article

ETAT DE CONTRAINTE ET DEFAUTS DE STRUCTURE CRISTALLINE DANS LES SYSTEMES SEMICONDUCTEUR-COUCHE DIELECTRIQUE AMORPHEGOROKHOV EB; NOSKOV AG; STENIN SI et al.1983; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1983; VOL. 12; NO 3; PP. 200-209; BIBL. 21 REF.Article

EPITAXIE DU GERMANIUM A PARTIR D'UN FAISCEAU MOLECULAIRE SUR UNE FACE VICINALE DU SILICIUM PRES DE (111)TOROPOV AI; SOKOLOV LV; PCHELYAKOV OP et al.1982; KRISTALLOGRAFIJE; ISSN 0023-4761; SUN; DA. 1982; VOL. 27; NO 4; PP. 751-756; H.T. 3; BIBL. 13 REF.Article

STRUCTURE OF SIO₂ PYROLITIC FILMS ON GE SUBSTRATES.PCHELYAKOV OP; GOROKHOV EB; POKROVSKAYA SV et al.1977; PHYS STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 43; NO 2; PP. 659-666; ABS. RUSSE; BIBL. 11 REF.Article

INFLUENCE OF CRYSTALLIZATION CONDITIONS ON FORMATION OF DISLOCATION STRUCTURE OF GERMANIUM HOMOEPITAXIAL LAYERS PRODUCED BY GAS-TRANSPORT TECHNIQUEVAULIN YD; MIGAL NN; MIGAL VP et al.1973; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1973; VOL. 15; NO 2; PP. 697-710; ABS. RUSSE; BIBL. 22 REF.Serial Issue

INFLUENCE DES IMPURETES SUR L'ENERGIE DES DEFAUTS D'EMPILEMENT DANS L'ARSENIURE DE GALLIUMASTAKHOV VM; VASIL'EVA LF; SIDOROV YU G et al.1980; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1980; VOL. 22; NO 2; PP. 477-482; BIBL. 14 REF.Article

FORMATION OF DISLOCATION STRUCTURE IN SILICON LAYERS ON NON-ORIENTING SUBSTRATES.MEYER S; ASEEV AL; KLIMENKO AG et al.1975; KRISTALL U. TECH.; DTSCH.; DA. 1975; VOL. 10; NO 3; PP. 247-257; ABS. RUSSE; BIBL. 23 REF.Article

STABILITE DES SURSTRUCTURES SUPERFICIELLESSOKOLOV LV; TOROPOV AI; BAKLANOV MR et al.1982; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1982; VOL. 56; NO 7; PP. 1809-1810; BIBL. 5 REF.Article

MECANISME DE CROISSANCE, STRUCTURE ET PROPRIETES DES COUCHES MINCES EPITAXIQUES DE GERMANIUM SUR SILICIUM OBTENUES PAR PULVERISATION IONIQUEPCHELYAKOV OP; ALEKSANDROV LN; LOVYAGIN RN et al.1976; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1976; VOL. 21; NO 4; PP. 812-816; BIBL. 7 REF.Article

PARTICULARITES DE LA STRUCTURE D'HETEROJONCTIONS GE-GAAS OBTENUES PAR DIVERSES METHODESASEEV AL; POGORELOV YU N; STENIN SI et al.1974; IZVEST. AKAD. NAUK S.S.S.R., SER. FIZ.; S.S.S.R.; DA. 1974; VOL. 38; NO 7; PP. 1522-1527; BIBL. 26 REF.Article